2SK2912L Todos los transistores

 ..1. Size:281K  inchange semiconductor
 2sk2912l.pdf

isc N-Channel MOSFET Transistor 2SK2912L FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 0.1. Size:109K  renesas
 rej03g1038 2sk2912lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:95K  renesas
 2sk2912.pdf

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1038-0200 (Previous ADE-208-495A) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

 7.2. Size:355K  inchange semiconductor
 2sk2912s.pdf

isc N-Channel MOSFET Transistor 2SK2912S FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS