2SK2925L Todos los transistores

 ..1. Size:354K  inchange semiconductor
 2sk2925l.pdf

isc N-Channel MOSFET Transistor 2SK2925L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.1. Size:109K  renesas
 rej03g1039 2sk2925lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:95K  renesas
 2sk2925.pdf

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1039-0500 (Previous ADE-208-454B) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 0.060 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L

 7.2. Size:286K  inchange semiconductor
 2sk2925s.pdf

isc N-Channel MOSFET Transistor 2SK2925S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d