2SK2926L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK2926LFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =55m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1040-0200 (Previous: ADE-208-535) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.042 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK(L)-(2)) (Package name: DP

SMD Type MOSFETN-Channel MOSFET2SK2926-ZJ Features VDS (V) = 60V ID = 15 A (VGS = 10V) RDS(ON) 55m (VGS = 10V) RDS(ON) 110m (VGS = 4V) High speed switchingDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 15 Pulsed Drai

isc N-Channel MOSFET Transistor 2SK2926SFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =55m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d