2SK3446 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92MOD)D1. SourceG2. Drain3. Gate321SRev.8.00

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 90 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (VDS = 250 V) Enhancement mode: Vth = 3.0 to 5

2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 A (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4

2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 50 m (typ.) High forward transfer admittance: Yfs = 9 S (typ.) Low leakage current: IDSS = 100 A (VDS = 150 V) Enhancementmode: Vth = 3.0 to 5.0 V (V

2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3442 Switching Regulator, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: Yfs = 28 S (typ.) Low leakage current: IDSS = 100 A (VDS = 100 V) Enhancement mode: Vth = 2.0~4.0 V (VD

2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Unit: mmRelay Drive and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to

2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 65 m (typ.) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: I = 100 A (V = 200 V) DSS DS Enhancement-mode: Vth = 3.

Ordering number : ENN66722SK3449N-Channel Silicon MOSFET2SK3449DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2190 4V drive.[2SK3449]8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Source1 2 32 : Drain3 : GateSpecifications2.44.8 SANYO : TO-126MLAbsolute Maximum Ratings at Ta=

Ordering number : ENN67852SK3448N-Channel Silicon MOSFET2SK3448Ultrahigh-Speed Switching UseFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2087A 4V drive.[2SK3448] Meets radial taping.2.51.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SpecificationsSANYO : NMPAbsolute Maximum Ratin

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features Capable of 4 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 10 V) Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92MOD)D1. SourceG2. Drain3. Gate321SRev.7.00 S