H5N1503P Todos los transistores

 

H5N1503P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H5N1503P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 290 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: TO3P
 

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H5N1503P Datasheet (PDF)

 ..1. Size:98K  renesas
 rej03g0186 h5n1503p.pdf pdf_icon

H5N1503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:108K  renesas
 rej03g0389 h5n1506p.pdf pdf_icon

H5N1503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... 2SK3418 , 2SK3419 , 2SK3446 , 2SK3447 , 2SK3736 , 2SK4093 , 2SK4150 , 2SK4151 , 60N06 , H5N1506P , H5N2003P , H5N2004DL , H5N2004DS , H5N2005DL , H5N2005DS , H5N2008P , H5N2301PF .

History: CED16N10 | AFN2308 | BUK9E4R4-40B | IXFL39N90 | AOI4286 | NP82N055KHE | GSM6236S

 

 
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