H5N1503P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H5N1503P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 290 nS

Cossⓘ - Capacitancia de salida: 770 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO3P

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H5N1503P datasheet

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H5N1503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 rej03g0389 h5n1506p.pdf pdf_icon

H5N1503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... 2SK3418, 2SK3419, 2SK3446, 2SK3447, 2SK3736, 2SK4093, 2SK4150, 2SK4151, IRLB3034, H5N1506P, H5N2003P, H5N2004DL, H5N2004DS, H5N2005DL, H5N2005DS, H5N2008P, H5N2301PF