2N6799LCC4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 93984A REPETITIVE AVALANCHE AND dv/dt RATED IRFE220 HEXFET TRANSISTORS JANTX2N6790U SURFACE MOUNT (LCC-18) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE220 100V 0.80 2.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology. Desinged t

Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF MIL-PRF-19500/557] N-CHANNEL 100Volt, 0.18 Product Summary , HEXFET The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE130 100V 0.18 8.0A

PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFET TRANSISTORS JANTXV2N6792 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF320 400V 1.8 2.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin

PD - 93986A IRFE420 JANTX2N6794U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794U HEXFET TRANSISTORS REF MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE420 500V 3.0 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology.

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

PD - 93985A IRFE320 JANTX2N6792U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792U HEXFET TRANSISTORS REF MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE320 400V 1.8 1.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology.

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0 1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800 gate power MOS field effect transistor designed for SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTIO

2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) POWER MOSFET 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) VDSS = 100V 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) ID = 7.4A 0.33 (0.013) Rad. RDS(ON) = 0.18 0.08 (0.003) 7 6 5 4 3 0.43 (0.017) Rad. 1.39 (0.05

2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! RDSON = 0.18

2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES V(BR)DSS = 200V ID = 5.5A ! RDSON = 0.40

2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C un

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag