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H7N0308AB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H7N0308AB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 100 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 70 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Carga de la puerta (Qg): 52 nC
   Tiempo de subida (tr): 370 nS
   Conductancia de drenaje-sustrato (Cd): 840 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0048 Ohm
   Paquete / Cubierta: TO220AB

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H7N0308AB Datasheet (PDF)

 0.1. Size:94K  renesas
rej03g1122 h7n0308abds.pdf

H7N0308AB
H7N0308AB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:107K  renesas
rej03g1124 h7n0308ldlslmds.pdf

H7N0308AB
H7N0308AB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:1500K  cn vbsemi
h7n0308cf.pdf

H7N0308AB
H7N0308AB

H7N0308CFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004 at VGS = 10 V 9830 82 nC0.005 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220 FULLPAK D Server DC/DCGSSDGN-Channel MOSFETTop Vi

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