HAT1047RJ Todos los transistores

 ..1. Size:1037K  cn vbsemi
 hat1047rj.pdf

HAT1047RJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC

 6.1. Size:123K  renesas
 rej03g0074 hat1047rrj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.2. Size:1929K  cn vbsemi
 hat1047r.pdf

HAT1047R www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 8.1. Size:52K  renesas
 hat1041t.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:31K  renesas
 hat1048r.pdf

HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ (at VGS = -10V) Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1048R Absol

 8.3. Size:25K  hitachi
 hat1044m.pdf

HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th. Edition December 1998 Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP 6 4 5 6 1 2 5 6 3 D D D D 2 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1044M Absolute Maximum Rating

 8.4. Size:50K  hitachi
 hat1043m.pdf

 8.5. Size:53K  hitachi
 hat1046r.pdf

HAT1046R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-1222 (Z) 1st. Edition Mar. 2001 Features Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistance RDS(on) = 30 m typ. (at VGS = 4 V) External View SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate S 3 S1 5, 6, 7

 8.6. Size:2047K  cn vbsemi
 hat1048rj.pdf

HAT1048RJ www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV p-channel power MOSFET VDS (V) -30 RDS(on) max. ( ) at VGS = 10 V 0.0050 Enables higher power density RDS(on) max. ( ) at VGS = 4.5 V 0.0080 100 % Rg and UIS tested Qg typ. (nC) 27 ID (A) 18 Configuration Single APPLICATIONS SO-8 Single S D Battery management in