HAT1047RJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HAT1047RJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

HAT1047Rwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

HAT1048RSilicon P Channel Power MOS FETPower SwitchingADE-208-1223A (Z)2nd. EditionJan. 2001Features Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistanceRDS(on) = 6.0 m typ (at VGS = -10V)OutlineSOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S12 3HAT1048RAbsol

HAT1044MSilicon P Channel Power MOS FETPower SwitchingADE-208-753C(Z)Preliminary 4th. EditionDecember 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP64561 2 5 63D D D D213G4 Source3 Gate1, 2, 5, 6 DrainS4HAT1044MAbsolute Maximum Rating

HAT1043MSilicon P Channel Power MOS FET Power SwitchingADE-208-754D (Z)5th EditionFebruary 1999Features Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V sourceOutlineTSOP64561 2 5 63D D D D213G4 Source3 Gate1, 2, 5, 6 DrainS4HAT1043MAbsolute Maximum Ratings (Ta = 25

HAT1046RSilicon P Channel Power MOS FETHigh Speed Power SwitchingADE-208-1222 (Z)1st. EditionMar. 2001Features Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistanceRDS(on) = 30 m typ. (at VGS = 4 V)External ViewSOP-8567843217 8 5 6D DD D42GG1, 3 Source2, 4 GateS 3S15, 6, 7

HAT1048RJwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV p-channel power MOSFETVDS (V) -30RDS(on) max. () at VGS = 10 V 0.0050 Enables higher power densityRDS(on) max. () at VGS = 4.5 V 0.0080 100 % Rg and UIS testedQg typ. (nC) 27ID (A) 18Configuration SingleAPPLICATIONSSO-8 SingleSD Battery management in