HAT1055RJ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT1055RJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 21 nC
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 135 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.076 Ohm
Encapsulados: SOP8
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HAT1055RJ datasheet
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HAT1047RJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC
Otros transistores... HAT1025R, HAT1026R, HAT1038R, HAT1047R, HAT1047RJ, HAT1048R, HAT1054R, HAT1055R, IRF840, HAT1065R, HAT1065T, HAT1069C, HAT1072H, HAT1089C, HAT1090C, HAT1091C, HAT1093C
