HAT1069C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT1069C
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.3 V
Qgⓘ - Carga de la puerta: 16 nC
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 235 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: CMFPAK6
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HAT1069C Datasheet (PDF)
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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HAT1048RSilicon P Channel Power MOS FETPower SwitchingADE-208-1223A (Z)2nd. EditionJan. 2001Features Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistanceRDS(on) = 6.0 m typ (at VGS = -10V)OutlineSOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S12 3HAT1048RAbsol
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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HAT1044MSilicon P Channel Power MOS FETPower SwitchingADE-208-753C(Z)Preliminary 4th. EditionDecember 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP64561 2 5 63D D D D213G4 Source3 Gate1, 2, 5, 6 DrainS4HAT1044MAbsolute Maximum Rating
hat1043m.pdf
HAT1043MSilicon P Channel Power MOS FET Power SwitchingADE-208-754D (Z)5th EditionFebruary 1999Features Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V sourceOutlineTSOP64561 2 5 63D D D D213G4 Source3 Gate1, 2, 5, 6 DrainS4HAT1043MAbsolute Maximum Ratings (Ta = 25
hat1046r.pdf
HAT1046RSilicon P Channel Power MOS FETHigh Speed Power SwitchingADE-208-1222 (Z)1st. EditionMar. 2001Features Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistanceRDS(on) = 30 m typ. (at VGS = 4 V)External ViewSOP-8567843217 8 5 6D DD D42GG1, 3 Source2, 4 GateS 3S15, 6, 7
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HAT1020RJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop
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HAT1024Rwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie
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HAT1024RJwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi
hat1048rj.pdf
HAT1048RJwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV p-channel power MOSFETVDS (V) -30RDS(on) max. () at VGS = 10 V 0.0050 Enables higher power densityRDS(on) max. () at VGS = 4.5 V 0.0080 100 % Rg and UIS testedQg typ. (nC) 27ID (A) 18Configuration SingleAPPLICATIONSSO-8 SingleSD Battery management in
hat1047r.pdf
HAT1047Rwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
hat1047rj.pdf
HAT1047RJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918