HAT1123R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT1123R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SOP8
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HAT1123R Datasheet (PDF)
rej03g1330 hat1127hds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat1128r.pdf

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S1 2 3Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =
rej03g0406 hat1126rrj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... HAT1094C , HAT1095C , HAT1096C , HAT1097R , HAT1097RJ , HAT1108C , HAT1110R , HAT1111C , IRFB4110 , HAT1126R , HAT1126RJ , HAT1146C , HAT1147C , HAT2016R , HAT2019R , HAT2020R , HAT2022R .
History: LSGD04R035 | STE30NK90Z | IRF9530SPBF | AM4812 | JCS6N90SA | FQD13N06LTF
History: LSGD04R035 | STE30NK90Z | IRF9530SPBF | AM4812 | JCS6N90SA | FQD13N06LTF



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