BUZ21 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ21
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 105
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 21
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia
de salida: 1100
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de BUZ21 MOSFET
-
Selección ⓘ de transistores por parámetros
BUZ21 PDF Specs
..2. Size:90K infineon
buz21.pdf 
BUZ 21 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 21 Pulsed drain current IDpuls TC = 25 C 84 Avalanche current,limited by Tjmax IAR ... See More ⇒
..3. Size:229K inchange semiconductor
buz21.pdf 
isc N-Channel Mosfet Transistor BUZ21 FEATURES Static Drain-Source On-Resistance R = 0.1 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay... See More ⇒
0.1. Size:371K siemens
buz210 buz211.pdf 
Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su ... See More ⇒
0.3. Size:113K siemens
buz21l.pdf 
BUZ 21 L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 21 Pulsed drain current IDpuls TC = 25 C 84 Avalanche current,l... See More ⇒
0.4. Size:116K siemens
buz215.pdf 
BUZ 215 SIPMOS Power Transistor N channel Enhancement mode FREDFET Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 215 500 V 5 A 1.5 TO-220 AB C67078-A1400-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 500 V VDGR Drain-gate voltage RGS = 20 k 500 Continuous drain current ID A TC = 30 C 5 Pulsed drain curre... See More ⇒
0.5. Size:90K infineon
buz21l.pdf 
BUZ 21L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 21 Pulsed drain current IDpuls TC = 25 C 84 Avalanche current,li... See More ⇒
0.6. Size:25K sti
buz210.pdf 
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE BUZ210 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuo... See More ⇒
0.7. Size:223K inchange semiconductor
buz211.pdf 
isc N-Channel Mosfet Transistor BUZ211 FEATURES Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela... See More ⇒
0.8. Size:228K inchange semiconductor
buz216.pdf 
isc N-Channel Mosfet Transistor BUZ216 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc... See More ⇒
0.9. Size:228K inchange semiconductor
buz215.pdf 
isc N-Channel Mosfet Transistor BUZ215 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc... See More ⇒
Otros transistores... BUP70
, BUP71
, BUZ10
, BUZ10A
, BUZ11
, BUZ11A
, BUZ11FI
, BUZ20
, IRF640N
, BUZ23
, BUZ24
, BUZ25
, BUZ32
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, BUZ36
, BUZ41A
, BUZ42
.