BUZ25 Datasheet. Equivalente

 ..1. Size:274K  st
 buz25.pdf

 ..2. Size:223K  inchange semiconductor
 buz25.pdf

isc N-Channel Mosfet Transistor BUZ25 FEATURES Static Drain-Source On-Resistance R = 0.1 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for

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 buz255.pdf

BUZ 255 Not for new design SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 255 200 V 13 A 0.24 TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 31 C 13 Pulsed drain current IDpuls TC = 25 C 52 Avalanche current,

 0.2. Size:214K  inchange semiconductor
 buz255.pdf

isc N-Channel Mosfet Transistor BUZ255 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc