BUZ25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel Mosfet Transistor BUZ25 FEATURES Static Drain-Source On-Resistance R = 0.1 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for

BUZ 255 Not for new design SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 255 200 V 13 A 0.24 TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 31 C 13 Pulsed drain current IDpuls TC = 25 C 52 Avalanche current,

isc N-Channel Mosfet Transistor BUZ255 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc