BUZ25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel Mosfet Transistor BUZ25FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for

BUZ 255Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 255 200 V 13 A 0.24 TO-220 AB C67078-S1406-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 31 C 13Pulsed drain current IDpulsTC = 25 C 52Avalanche current,

isc N-Channel Mosfet Transistor BUZ255FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc