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Preliminary Datasheet HAT2244WP REJ03G1549-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 13, 2010 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2,

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Lead Free Outline LFPAK 5 4 3 2 5 1 D 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.20

Preliminary Datasheet HAT2201WP REJ03G1679-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 21, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet HAT2256R Silicon N Channel Power MOSFET Power Switching R07DS1369EJ0401 Rev.4.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 24 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D D D D 5 6 7 8 1, 2, 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet HAT2276R Silicon N Channel Power MOSFET Power Switching R07DS1371EJ0301 Rev.3.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 21 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 7 8 5 6 D D D D 5 6 7 8 1, 3 So

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet HAT2200WP REJ03G1678-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 13, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet HAT2203C R07DS0323EJ0500 (Previous REJ03G0447-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code PWSF0006JA-A (Package name CMFPAK - 6) 2 3 4 5 D D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201 Rev.2.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 7 8 5 6 D D D D 5 6 7 8 1, 3 So

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S1 S 3 MOS1 MOS2 Rev.4.00, Jul.3