HAT2244WP Todos los transistores

 

HAT2244WP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HAT2244WP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14.5 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: WPAK
 

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HAT2244WP Datasheet (PDF)

 0.1. Size:84K  renesas
rej03g1549 hat2244wpds.pdf pdf_icon

HAT2244WP

Preliminary Datasheet HAT2244WP REJ03G1549-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 13, 2010Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2,

 8.1. Size:96K  renesas
rej03g1241 hat2240c.pdf pdf_icon

HAT2244WP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:43K  renesas
hat2265h.pdf pdf_icon

HAT2244WP

HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Lead Free Outline LFPAK54325 1D4G1, 2, 3 Source4 Gate5 DrainS S S1 2 3Rev.0.00, Sept.20

 9.2. Size:84K  renesas
rej03g1679 hat2201wpds.pdf pdf_icon

HAT2244WP

Preliminary Datasheet HAT2201WP REJ03G1679-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 21, 2010Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2, 3

Otros transistores... HAT2215R , HAT2215RJ , HAT2217C , HAT2218R , HAT2220R , HAT2221C , HAT2226R , HAT2240C , AO3400 , HAT2256R , HAT2266H , HAT2267H , HAT2268C , HAT2270H , HAT2275R , HAT2276R , HAT2279H .

History: LSB55R050GT | HM10P10D

 

 
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