HAT2256R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT2256R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
Qgⓘ - Carga de la puerta: 10 nC
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET HAT2256R
HAT2256R Datasheet (PDF)
hat2256r.pdf
Data Sheet HAT2256R Silicon N Channel Power MOSFET Power Switching R07DS1369EJ0401Rev.4.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 24 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D D D D56781, 2, 3
hat2265h.pdf
HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Lead Free Outline LFPAK54325 1D4G1, 2, 3 Source4 Gate5 DrainS S S1 2 3Rev.0.00, Sept.20
rej03g1679 hat2201wpds.pdf
Preliminary Datasheet HAT2201WP REJ03G1679-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 21, 2010Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2, 3
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Preliminary Datasheet HAT2244WP REJ03G1549-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 13, 2010Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2,
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hat2276r.pdf
Data Sheet HAT2276R Silicon N Channel Power MOSFET Power Switching R07DS1371EJ0301Rev.3.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 21 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So
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Preliminary Datasheet HAT2200WP REJ03G1678-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 13, 2010Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2, 3
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Preliminary Datasheet HAT2203C R07DS0323EJ0500(Previous: REJ03G0447-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A(Package name: CMFPAK - 6)2 3 4 5D D
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hat2280r.pdf
Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201Rev.2.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So
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hat2275r.pdf
HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline SOP-8567843217 8 5 6D DD D42GG1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS1 S 3MOS1 MOS2Rev.4.00, Jul.3
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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