HAT2276R Todos los transistores

 

HAT2276R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAT2276R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 7.5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.021 Ohm

Empaquetado / Estuche: SOP8

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HAT2276R Datasheet (PDF)

4.1. rej03g1464 hat2279hds.pdf Size:105K _renesas

HAT2276R
HAT2276R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. hat2275r.pdf Size:127K _renesas

HAT2276R
HAT2276R

HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 25 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S1 S 3 MOS1 MOS2 Rev.4.00, Jul.3

 4.3. rej03g1596 hat2279nds.pdf Size:134K _renesas

HAT2276R
HAT2276R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

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