HAT2281C Todos los transistores

 

HAT2281C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HAT2281C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.142 Ohm
   Paquete / Cubierta: CMFPAK6
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HAT2281C Datasheet (PDF)

 0.1. Size:96K  renesas
rej03g1328 hat2281cds.pdf pdf_icon

HAT2281C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:70K  renesas
rej03g1470 hat2287wpds.pdf pdf_icon

HAT2281C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:96K  renesas
rej03g1329 hat2282cds.pdf pdf_icon

HAT2281C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:98K  renesas
hat2280r.pdf pdf_icon

HAT2281C

Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201Rev.2.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS4020AP | 2N7075

 

 
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