HAT2282C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT2282C 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 25 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.225 Ohm
Encapsulados: CMFPAK6
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HAT2282C datasheet
rej03g1329 hat2282cds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1328 hat2281cds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1470 hat2287wpds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2280r.pdf
Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201 Rev.2.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 7 8 5 6 D D D D 5 6 7 8 1, 3 So
Otros transistores... HAT2268C, HAT2270H, HAT2275R, HAT2276R, HAT2279H, HAT2279N, HAT2280R, HAT2281C, AON7506, HAT2284H, HAT2286C, HAT2287WP, HAT2291C, HAT2292C, HAT2299WP, HAT3004R, HAT3006R
Parámetros del MOSFET. Cómo se afectan entre sí.
History: HGP046NE6AL | JFAM50N50C
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