HAT3036R Todos los transistores

 

HAT3036R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HAT3036R
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.5 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

HAT3036R Datasheet (PDF)

 ..1. Size:298K  renesas
hat3036r.pdf pdf_icon

HAT3036R

Data Sheet HAT3036R Silicon N/P Channel Power MOSFET Power Switching R07DS1373EJ0501Rev.5.01 Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56782 44G G321 1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 1 S 3

 8.1. Size:136K  renesas
hat3038r.pdf pdf_icon

HAT3036R

Data Sheet HAT3038R Silicon N/P Channel Power MOSFET Power Switching R07DS1375EJ0301Rev.3.01 Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56782 4432 G G1 1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 1 S 3N

 8.2. Size:134K  renesas
hat3037r.pdf pdf_icon

HAT3036R

Data Sheet HAT3037R Silicon N/P Channel Power MOSFET Power Switching R07DS1374EJ0501Rev.5.01 Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56782 4432 G G1 1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 1 S 3N

 9.1. Size:100K  renesas
rej03g0405 hat3015t.pdf pdf_icon

HAT3036R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MRF5003 | IRFR120TR

 

 
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