HAT3037R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT3037R
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
Qgⓘ - Carga de la puerta: 3.5 nC
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: SOP8
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HAT3037R Datasheet (PDF)
hat3037r.pdf
Data Sheet HAT3037R Silicon N/P Channel Power MOSFET Power Switching R07DS1374EJ0501Rev.5.01 Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56782 4432 G G1 1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 1 S 3N
hat3038r.pdf
Data Sheet HAT3038R Silicon N/P Channel Power MOSFET Power Switching R07DS1375EJ0301Rev.3.01 Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56782 4432 G G1 1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 1 S 3N
hat3036r.pdf
Data Sheet HAT3036R Silicon N/P Channel Power MOSFET Power Switching R07DS1373EJ0501Rev.5.01 Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56782 44G G321 1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 1 S 3
rej03g0405 hat3015t.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat3008rj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat3018rj.pdf
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hat3019r.pdf
Preliminary Datasheet HAT3019R Nch 100V, 3.5A, 115mmax. Pch -100V, -2.3A, 300mmax R07DS1324EJ0700Silicon N/P Channel Power MOS FET Rev.7.00Feb 18, 2016Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D DD
hat3029r.pdf
HAT3029Rwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS
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