BUZ50ASM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 50 A SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 50 A 1000 V 2.5 A 5 TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k 1000 Continuous drain current ID A TC = 25 C 2.5 Pulsed drain current IDp

BUZ50A 220M BUZ50B 220M MECHANICAL DATA Dimensions in mm MOS POWER N-CHANNEL ENHANCEMENT MODE 10.6 (0.42) 4.6 (0.18) TRANSISTORS 0.8 (0.03) 3.70 Dia. Nom FEATURES HERMETIC TO220 ISOLATED METAL PACKAGE 1 2 3 CECC SCREENING OPTIONS JAN LEVEL SCREENING OPTIONS APPLICATIONS Hermetically sealed version for high relia- 1.0 bility power linear and switching appli

BUZ 50 C SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 50 C 1000 V 2.3 A 6 TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k 1000 Continuous drain current ID A TC = 25 C 2.3 Pulsed drain current IDp

BUZ 50 B SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 50 B 1000 V 2 A 8 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k 1000 Continuous drain current ID A TC = 25 C 2 Pulsed drain current IDpuls