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BUZ50ASM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ50ASM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 1000 V

Corriente continua de drenaje (Id): 7.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: TO220SM

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BUZ50ASM Datasheet (PDF)

4.1. buz50a.pdf Size:207K _siemens

BUZ50ASM
BUZ50ASM

BUZ 50 A SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 50 A 1000 V 2.5 A 5 ? TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k? 1000 Continuous drain current ID A TC = 25 C 2.5 Pulsed drain current IDpuls TC = 25

4.2. buz50a-220m buz50b-220m.pdf Size:17K _semelab

BUZ50ASM

BUZ50A–220M BUZ50B–220M MECHANICAL DATA Dimensions in mm MOS POWER N-CHANNEL ENHANCEMENT MODE 10.6 (0.42) 4.6 (0.18) TRANSISTORS 0.8 (0.03) 3.70 Dia. Nom FEATURES • HERMETIC TO220 ISOLATED METAL PACKAGE 1 2 3 • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS APPLICATIONS: Hermetically sealed version for high relia- 1.0 bility power linear and switching appli

 5.1. buz50b.pdf Size:199K _siemens

BUZ50ASM
BUZ50ASM

BUZ 50 B SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 50 B 1000 V 2 A 8 ? TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k? 1000 Continuous drain current ID A TC = 25 C 2 Pulsed drain current IDpuls TC = 25 C 8

5.2. buz50c.pdf Size:203K _siemens

BUZ50ASM
BUZ50ASM

BUZ 50 C SIPMOS Power Transistor N channel Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 50 C 1000 V 2.3 A 6 ? TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k? 1000 Continuous drain current ID A TC = 25 C 2.3 Pulsed drain current IDpuls TC = 25

Otros transistores... BUZ42 , BUZ45 , BUZ45A , BUZ46 , BUZ50A , BUZ50A-220M , BUZ50A-220SM , BUZ50A-220TM , IRFP064N , BUZ50A-TO220M , BUZ50B , BUZ50B-220M , BUZ50B-220SM , BUZ50BSM , BUZ50B-TO220M , BUZ60 , BUZ60B .

 

 
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