BUZ50B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 50 BSIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 50 B 1000 V 2 A 8 TO-220 AB C67078-A1307-A4Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 1000 VVDGRDrain-gate voltageRGS = 20 k 1000Continuous drain current ID ATC = 25 C 2Pulsed drain current IDpuls

BUZ50A220MBUZ50B220MMECHANICAL DATADimensions in mmMOS POWER N-CHANNELENHANCEMENT MODE10.6 (0.42)4.6 (0.18)TRANSISTORS0.8(0.03)3.70 Dia. NomFEATURES HERMETIC TO220 ISOLATED METALPACKAGE1 2 3 CECC SCREENING OPTIONS JAN LEVEL SCREENING OPTIONSAPPLICATIONS:Hermetically sealed version for high relia-1.0 bility power linear and switching appli

BUZ 50 CSIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 50 C 1000 V 2.3 A 6 TO-220 AB C67078-A1307-A5Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 1000 VVDGRDrain-gate voltageRGS = 20 k 1000Continuous drain current ID ATC = 25 C 2.3Pulsed drain current IDp

BUZ 50 ASIPMOS Power Transistor N channel Enhancement modePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 50 A 1000 V 2.5 A 5 TO-220 AB C67078-A1307-A3Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 1000 VVDGRDrain-gate voltageRGS = 20 k 1000Continuous drain current ID ATC = 25 C 2.5Pulsed drain current IDp