RJK0317DSP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 44D1

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0354DSP REJ03G1661-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 05, 2010Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D

Preliminary Datasheet RJK0348DPA REJ03G1643-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D D D D56781,

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9mmax. R07DS0767EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

Preliminary Datasheet RJK0390DPA REJ03G1823-0130Silicon N Channel Power MOS FET Rev.1.30Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200Power Switching Rev.2.00Dec 07, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.0 m typ. (at VGS = 8.0 V) Pb-free Halogen-free Outline RENE

Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 29, 2012Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(P

Preliminary Datasheet RJK0395DPA REJ03G1786-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Preliminary Datasheet RJK03B7DPA REJ03G1789-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

Preliminary Datasheet RJK03M4DPA 30V, 35A, 4.6mmax. R07DS0768EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0351DPA REJ03G1646-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410High Speed Power Switching Rev.4.10May 13, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A(Package name: WPAK-D2)2 3 4 9D1 D1 D1S1/D2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

Preliminary Datasheet RJK0349DPA REJ03G1645-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

Preliminary Datasheet RJK0396DPA REJ03G1787-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mmax. R07DS0766EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

Preliminary Datasheet RJK0391DPA REJ03G1824-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

Preliminary Datasheet RJK03E0DNS REJ03G1902-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

Preliminary Datasheet RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0094EJ0220(Previous: REJ03G1828-0210)Power Switching Rev.2.20Aug 26, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V) Pb-free H

Preliminary Datasheet RJK03B8DPA REJ03G1790-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008

Preliminary Datasheet RJK03E2DNS REJ03G1904-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

Preliminary Datasheet RJK0379DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1826-0210Power Switching Rev.2.10May 13, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Preliminary Datasheet RJK0368DPA REJ03G1658-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: WP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DatasheetRJK03F6DNS REJ03G1916-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(Package name:

Preliminary Datasheet RJK0397DPA REJ03G1788-0230Silicon N Channel Power MOS FET Rev.2.30Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Preliminary Datasheet RJK0346DPA REJ03G1642-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0394DPA REJ03G1785-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

RJK0371DSP Silicon N Channel Power MOS FET Power Switching REJ03G1663-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D D D D56781, 2

Preliminary Datasheet RJK0358DPA REJ03G1651-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 21, 2010Features High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DC-A(Package name: WPAK(2))5 6 7 8

Preliminary Datasheet RJK0392DPA REJ03G1825-0230Silicon N Channel Power MOS FET Rev.2.30Power Switching Jun 17, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Preliminary Datasheet RJK03E7DPA REJ03G1931-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK03F0DPA REJ03G1934-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

Preliminary Datasheet RJK03B9DPA REJ03G1791-0320Silicon N Channel Power MOS FET Rev.3.20Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3mmax. R07DS0765EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 08, 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package nam

Preliminary Datasheet RJK03E1DNS REJ03G1903-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220Power Switching Rev.2.20 May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE

Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210Power Switching Rev.2.10May 13, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

Preliminary Datasheet RJK0353DPA REJ03G1647-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Preliminary Datasheet RJK0393DPA REJ03G1784-0220Silicon N Channel Power MOS FET Rev.2.20Power Switching May 21, 2010Features High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

Preliminary Datasheet RJK03M5DPA 30V, 30A, 6.5mmax. R07DS0770EJ0200N Channel Power MOS FET Rev.2.00High Speed Power Switching Feb 12 2013Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A(Package name

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

Preliminary Datasheet RJK03C0DPA REJ03G1822-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Preliminary Datasheet RJK0355DPA REJ03G1649-0510Silicon N Channel Power MOS FET Rev.5.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

RJK0365DPAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S