RJK0349DSP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0349DSP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.7 nS

Cossⓘ - Capacitancia de salida: 740 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm

Encapsulados: SOP8

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RJK0349DSP datasheet

 0.1. Size:127K  renesas
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RJK0349DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:95K  renesas
 rej03g1645 rjk0349dpads.pdf pdf_icon

RJK0349DSP

Preliminary Datasheet RJK0349DPA REJ03G1645-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

 8.1. Size:125K  renesas
 rej03g1644 rjk0348dspds.pdf pdf_icon

RJK0349DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:95K  renesas
 rej03g1643 rjk0348dpads.pdf pdf_icon

RJK0349DSP

Preliminary Datasheet RJK0348DPA REJ03G1643-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

MOSTRAR MÁS

Otros transistores... RJK0329DPB, RJK0330DPB, RJK0331DPB, RJK0332DPB, RJK0346DPA, RJK0348DPA, RJK0348DSP, RJK0349DPA, 2SK3878, RJK0351DPA, RJK0351DSP, RJK0352DSP, RJK0353DPA, RJK0353DSP, RJK0354DSP, RJK0355DPA, RJK0355DSP