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RJK0351DSP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0351DSP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 4.6 nS

Conductancia de drenaje-sustrato (Cd): 470 pF

Resistencia drenaje-fuente RDS(on): 0.0052 Ohm

Empaquetado / Estuche: SOP8

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RJK0351DSP Datasheet (PDF)

1.1. rej03g1721 rjk0351dspds.pdf Size:127K _renesas

RJK0351DSP
RJK0351DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

2.1. rej03g1646 rjk0351dpads.pdf Size:94K _renesas

RJK0351DSP
RJK0351DSP

Preliminary Datasheet RJK0351DPA REJ03G1646-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.2 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

4.1. rej03g1660 rjk0352dspds.pdf Size:96K _renesas

RJK0351DSP
RJK0351DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1661 rjk0354dspds.pdf Size:88K _renesas

RJK0351DSP
RJK0351DSP

Preliminary Datasheet RJK0354DSP REJ03G1661-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 05, 2010 Features ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.4 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 6 7 8 D D D D 5 6 7

4.3. rej03g1652 rjk0358dspds.pdf Size:125K _renesas

RJK0351DSP
RJK0351DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rej03g1651 rjk0358dpads.pdf Size:94K _renesas

RJK0351DSP
RJK0351DSP

Preliminary Datasheet RJK0358DPA REJ03G1651-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.6 m? typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 6 7

4.5. rej03g1648 rjk0353dspds.pdf Size:125K _renesas

RJK0351DSP
RJK0351DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. rej03g1649 rjk0355dpads.pdf Size:94K _renesas

RJK0351DSP
RJK0351DSP

Preliminary Datasheet RJK0355DPA REJ03G1649-0510 Silicon N Channel Power MOS FET Rev.5.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 8.2 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

4.7. rej03g1647 rjk0353dpads.pdf Size:94K _renesas

RJK0351DSP
RJK0351DSP

Preliminary Datasheet RJK0353DPA REJ03G1647-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.0 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

4.8. rej03g1650 rjk0355dspds.pdf Size:126K _renesas

RJK0351DSP
RJK0351DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Otros transistores... RJK0331DPB , RJK0332DPB , RJK0346DPA , RJK0348DPA , RJK0348DSP , RJK0349DPA , RJK0349DSP , RJK0351DPA , IRFZ44V , RJK0352DSP , RJK0353DPA , RJK0353DSP , RJK0354DSP , RJK0355DPA , RJK0355DSP , RJK0364DPA , RJK0365DPA .

 


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Introduzca al menos 1 números o letras