RJK0379DPA Todos los transistores

 

RJK0379DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0379DPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.5 nS
   Cossⓘ - Capacitancia de salida: 1080 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: WPAK
 

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RJK0379DPA Datasheet (PDF)

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RJK0379DPA

Preliminary Datasheet RJK0379DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1826-0210Power Switching Rev.2.10May 13, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.1. Size:86K  renesas
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RJK0379DPA

RJK0371DSP Silicon N Channel Power MOS FET Power Switching REJ03G1663-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D D D D56781, 2

 9.1. Size:125K  renesas
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RJK0379DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:106K  renesas
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RJK0379DPA

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

Otros transistores... RJK0353DSP , RJK0354DSP , RJK0355DPA , RJK0355DSP , RJK0364DPA , RJK0365DPA , RJK0366DPA , RJK0368DPA , TK10A60D , RJK0380DPA , RJK0381DPA , RJK0389DPA , RJK0390DPA , RJK0391DPA , RJK0392DPA , RJK0393DPA , RJK0394DPA .

History: 12N80G-TA3-T

 

 
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