RJK0381DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK0381DPA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 490 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: WPAK
RJK0381DPA Datasheet (PDF)
rej03g1829 rjk0381dpads.pdf

Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210Power Switching Rev.2.10May 13, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES
rej03g1722 rjk0389dpads.pdf

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410High Speed Power Switching Rev.4.10May 13, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A(Package name: WPAK-D2)2 3 4 9D1 D1 D1S1/D2
rej03g1827 rjk0380dpads.pdf

Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220Power Switching Rev.2.20 May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE
Otros transistores... RJK0355DPA , RJK0355DSP , RJK0364DPA , RJK0365DPA , RJK0366DPA , RJK0368DPA , RJK0379DPA , RJK0380DPA , 4N60 , RJK0389DPA , RJK0390DPA , RJK0391DPA , RJK0392DPA , RJK0393DPA , RJK0394DPA , RJK0395DPA , RJK0396DPA .



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