RJK0381DPA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK0381DPA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 490 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Encapsulados: WPAK
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RJK0381DPA datasheet
rej03g1829 rjk0381dpads.pdf
Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES
rej03g1722 rjk0389dpads.pdf
Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A (Package name WPAK-D2) 2 3 4 9 D1 D1 D1 S1/D2
rej03g1827 rjk0380dpads.pdf
Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220 Power Switching Rev.2.20 May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE
Otros transistores... RJK0355DPA, RJK0355DSP, RJK0364DPA, RJK0365DPA, RJK0366DPA, RJK0368DPA, RJK0379DPA, RJK0380DPA, 12N60, RJK0389DPA, RJK0390DPA, RJK0391DPA, RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, RJK0396DPA
History: OSG60R180DT3F
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