RJK0393DPA Datasheet. Equivalente

 0.1. Size:93K  renesas
 rej03g1784 rjk0393dpads.pdf

Preliminary Datasheet RJK0393DPA REJ03G1784-0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching May 21, 2010 Features High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

 8.1. Size:118K  renesas
 rej03g1823 rjk0390dpads.pdf

Preliminary Datasheet RJK0390DPA REJ03G1823-0130 Silicon N Channel Power MOS FET Rev.1.30 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.2. Size:92K  renesas
 rej03g1786 rjk0395dpads.pdf

Preliminary Datasheet RJK0395DPA REJ03G1786-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.3. Size:92K  renesas
 rej03g1787 rjk0396dpads.pdf

Preliminary Datasheet RJK0396DPA REJ03G1787-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.4. Size:95K  renesas
 rej03g1824 rjk0391dpads.pdf

Preliminary Datasheet RJK0391DPA REJ03G1824-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.5. Size:92K  renesas
 rej03g1788 rjk0397dpads.pdf

Preliminary Datasheet RJK0397DPA REJ03G1788-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.6. Size:92K  renesas
 rej03g1785 rjk0394dpads.pdf

Preliminary Datasheet RJK0394DPA REJ03G1785-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.7. Size:96K  renesas
 rej03g1825 rjk0392dpads.pdf

Preliminary Datasheet RJK0392DPA REJ03G1825-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching Jun 17, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-