RJK0395DPA Todos los transistores

 

RJK0395DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0395DPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.9 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0077 Ohm
   Paquete / Cubierta: WPAK
 

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RJK0395DPA Datasheet (PDF)

 0.1. Size:92K  renesas
rej03g1786 rjk0395dpads.pdf pdf_icon

RJK0395DPA

Preliminary Datasheet RJK0395DPA REJ03G1786-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

 8.1. Size:118K  renesas
rej03g1823 rjk0390dpads.pdf pdf_icon

RJK0395DPA

Preliminary Datasheet RJK0390DPA REJ03G1823-0130Silicon N Channel Power MOS FET Rev.1.30Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

 8.2. Size:92K  renesas
rej03g1787 rjk0396dpads.pdf pdf_icon

RJK0395DPA

Preliminary Datasheet RJK0396DPA REJ03G1787-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

 8.3. Size:95K  renesas
rej03g1824 rjk0391dpads.pdf pdf_icon

RJK0395DPA

Preliminary Datasheet RJK0391DPA REJ03G1824-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Otros transistores... RJK0380DPA , RJK0381DPA , RJK0389DPA , RJK0390DPA , RJK0391DPA , RJK0392DPA , RJK0393DPA , RJK0394DPA , IRFP450 , RJK0396DPA , RJK0397DPA , RJK03A4DPA , RJK03B7DPA , RJK03B8DPA , RJK03B9DPA , RJK03C0DPA , RJK03C1DPB .

History: UT3400G-AE2-R | CS6N70F | PMT200EPE | AM2398N | SFF250ZDB | FTK6N70P | VN2406L

 

 
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