RJK03E6DPA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK03E6DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.4 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm

Encapsulados: WPAK

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RJK03E6DPA datasheet

 0.1. Size:95K  renesas
 rej03g1930 rjk03e6dpads.pdf pdf_icon

RJK03E6DPA

Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

 8.1. Size:106K  renesas
 rej03g1928 rjk03e4dpads.pdf pdf_icon

RJK03E6DPA

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

 8.2. Size:108K  renesas
 rej03g1933 rjk03e9dpads.pdf pdf_icon

RJK03E6DPA

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

 8.3. Size:118K  renesas
 rej03g1932 rjk03e8dpads.pdf pdf_icon

RJK03E6DPA

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

MOSTRAR MÁS

Otros transistores... RJK03C2DPB, RJK03C5DPA, RJK03E0DNS, RJK03E1DNS, RJK03E2DNS, RJK03E3DNS, RJK03E4DPA, RJK03E5DPA, 20N50, RJK03E7DPA, RJK03E8DPA, RJK03E9DPA, RJK03F0DPA, RJK03F6DNS, RJK03F7DNS, RJK03F8DNS, RJK03F9DNS