RJK0658DPA Datasheet. Equivalente

 ..1. Size:135K  renesas
 r07ds0344ej rjk0658dpa.pdf

Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8

 8.1. Size:116K  renesas
 r07ds0343ej rjk0657dpa.pdf

Preliminary Datasheet RJK0657DPA R07DS0343EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8

 8.2. Size:81K  renesas
 r07ds0077ej rjk0652dpb.pdf

Preliminary Datasheet RJK0652DPB R07DS0077EJ0102 (Previous REJ03G1766-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 8.3. Size:159K  renesas
 rej03g1880 rjk0654dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:179K  renesas
 rej03g1882 rjk0656dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:180K  renesas
 rej03g1881 rjk0655dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:81K  renesas
 r07ds0076ej rjk0651dpb.pdf

Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 (Previous REJ03G1765-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 11 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 8.7. Size:82K  renesas
 r07ds0078ej rjk0653dpb.pdf

Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 (Previous REJ03G1760-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 3.8 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 8.8. Size:134K  renesas
 r07ds0345ej rjk0659dpa.pdf

Preliminary Datasheet RJK0659DPA R07DS0345EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8