RJK0856DPB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0856DPB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0069 Ohm

Encapsulados: LFPAK

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RJK0856DPB datasheet

 0.1. Size:180K  renesas
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RJK0856DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:81K  renesas
r07ds0080ej rjk0852dpb.pdf pdf_icon

RJK0856DPB

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102 (Previous REJ03G1774-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.2. Size:81K  renesas
r07ds0081ej rjk0853dpb.pdf pdf_icon

RJK0856DPB

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202 (Previous REJ03G1772-0201) Silicon N Channel Power MOS FET Rev.2.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.3. Size:81K  renesas
r07ds0079ej rjk0851dpb.pdf pdf_icon

RJK0856DPB

Preliminary Datasheet RJK0851DPB R07DS0079EJ0102 (Previous REJ03G1773-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Functions High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 18 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

Otros transistores... RJK0658DPA, RJK0659DPA, RJK0660DPA, RJK0851DPB, RJK0852DPB, RJK0853DPB, RJK0854DPB, RJK0855DPB, IRF840, RJK1008DPE, RJK1008DPN, RJK1008DPP, RJK1021DPE, RJK1021DPN, RJK1028DNS, RJK1028DPA, RJK1028DSP