RJK1212DPA Todos los transistores

 

RJK1212DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK1212DPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: WPAK

 Búsqueda de reemplazo de MOSFET RJK1212DPA

 

RJK1212DPA Datasheet (PDF)

 ..1. Size:149K  renesas
r07ds0091ej rjk1212dpa.pdf

RJK1212DPA
RJK1212DPA

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 6.1. Size:125K  renesas
r07ds0092ej rjk1212dns.pdf

RJK1212DPA
RJK1212DPA

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Jun 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 8.1. Size:108K  renesas
r07ds0089ej rjk1211dpa.pdf

RJK1212DPA
RJK1212DPA

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 8.2. Size:95K  renesas
r07ds0090ej rjk1211dns.pdf

RJK1212DPA
RJK1212DPA

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Jan 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

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