RJK2006DPE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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RJK2006DPE Datasheet (PDF)

1.1. rej03g0512 rjk2006dpj.pdf Size:238K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. rej03g0474 rjk2009dpm.pdf Size:86K _renesas

 Preliminary Datasheet RJK2009DPM REJ03G0474-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

 5.1. rej03g1868 rjk2054dpcds.pdf Size:102K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. rjk2061jpe.pdf Size:117K _renesas

 Preliminary Datasheet RJK2061JPE R07DS0369EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 12, 2011 Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 55 mΩ typ. • Low input capacitance : Ciss = 1850 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1. Gate

 5.3. r07ds0416ej rjk2017dpp.pdf Size:99K _renesas

 Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 (Previous: REJ03G1797-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 07, 2011 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D 1.

5.4. rjk2076dpa.pdf Size:87K _renesas

 Preliminary Datasheet RJK2076DPA R07DS0859EJ0200 200V - 20A - MOS FET Rev.2.00 High Speed Power Switching Jan 08, 2013 Features  Low on-resistance RDS(on) = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)  Low leakage current  High speed switching Outline REN

 5.5. rej03g1735 rjk2055dpads.pdf Size:117K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.6. rej03g1761 rjk2057dpads.pdf Size:115K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.7. rej03g1589 rjk2017dpeds.pdf Size:121K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.8. rjk2062jpk.pdf Size:85K _renesas

 Preliminary Datasheet RJK2062JPK R07DS0488EJ0100 200 V - 80 A - N Channel Power MOS FET Rev.1.00 High Speed Power Switching Sep 19, 2012 Features  For Automotive applications  AEC-Q101 compliant  Low on-resistance : RDS(on) = 17 m typ.  Low input capacitance : Ciss = 6800 pF typ Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 2, 4 4 D

5.9. rjk2075dpa.pdf Size:87K _renesas

 Preliminary Datasheet RJK2075DPA R07DS0856EJ0200 200V - 20A - MOS FET Rev.2.00 High Speed Power Switching Jan 10, 2013 Features  Low on-resistance RDS(on) = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 12N65KG-TQ | 12N65KG-TF | 12N65KG-TA | 12N65KL-TQ | 12N65KL-TA | IRFU430A | IRFSL7787 | IRFSL7762 | IRFSL4510 | IRFP4905 | IRFP3207Z | IRFL3713S | IPI80CN10N | IPI600N25N3 | IPI530N15N3 |