RJK2006DPJ Todos los transistores

 

RJK2006DPJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK2006DPJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 100 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Corriente continua de drenaje |Id|: 40 A

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 3 V
   Carga de la puerta (Qg): 43 nC
   Resistencia entre drenaje y fuente RDS(on): 0.052 Ohm
   Paquete / Cubierta: LDPAK

 Búsqueda de reemplazo de MOSFET RJK2006DPJ

 

RJK2006DPJ Datasheet (PDF)

 ..1. Size:238K  renesas
rej03g0512 rjk2006dpj.pdf

RJK2006DPJ
RJK2006DPJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:262K  inchange semiconductor
rjk2006dpe.pdf

RJK2006DPJ
RJK2006DPJ

Isc N-Channel MOSFET Transistor RJK2006DPEFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 8.1. Size:86K  renesas
rej03g0474 rjk2009dpm.pdf

RJK2006DPJ
RJK2006DPJ

Preliminary Datasheet RJK2009DPM REJ03G0474-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. Gate2. DrainG3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item Symbol

 9.1. Size:115K  renesas
rej03g1761 rjk2057dpads.pdf

RJK2006DPJ
RJK2006DPJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:102K  renesas
rej03g1868 rjk2054dpcds.pdf

RJK2006DPJ
RJK2006DPJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:87K  renesas
rjk2075dpa.pdf

RJK2006DPJ
RJK2006DPJ

Preliminary Datasheet RJK2075DPA R07DS0856EJ0200200V - 20A - MOS FET Rev.2.00High Speed Power Switching Jan 10, 2013Features Low on-resistance RDS(on) = 0.054 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PWSN0008DE-A(Package name: WPAK(3F))5 6 7 8D D D D86 754 1, 2, 3

 9.4. Size:99K  renesas
r07ds0416ej rjk2017dpp.pdf

RJK2006DPJ
RJK2006DPJ

Preliminary Datasheet RJK2017DPP R07DS0416EJ0300(Previous: REJ03G1797-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 07, 2011Features Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A(Package name: TO-220FN)D1.

 9.5. Size:117K  renesas
rej03g1735 rjk2055dpads.pdf

RJK2006DPJ
RJK2006DPJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:87K  renesas
rjk2076dpa.pdf

RJK2006DPJ
RJK2006DPJ

Preliminary Datasheet RJK2076DPA R07DS0859EJ0200200V - 20A - MOS FET Rev.2.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.068 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C) Low leakage current High speed switching Outline REN

 9.7. Size:85K  renesas
rjk2062jpk.pdf

RJK2006DPJ
RJK2006DPJ

Preliminary Datasheet RJK2062JPK R07DS0488EJ0100200 V - 80 A - N Channel Power MOS FET Rev.1.00High Speed Power Switching Sep 19, 2012Features For Automotive applications AEC-Q101 compliant Low on-resistance : RDS(on) = 17 m typ. Low input capacitance : Ciss = 6800 pF typ Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P) 2, 44D

 9.8. Size:117K  renesas
rjk2061jpe.pdf

RJK2006DPJ
RJK2006DPJ

Preliminary Datasheet RJK2061JPE R07DS0369EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 12, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 55 m typ. Low input capacitance : Ciss = 1850 pF typ Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )2, 4D41. Gate

 9.9. Size:121K  renesas
rej03g1589 rjk2017dpeds.pdf

RJK2006DPJ
RJK2006DPJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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