RJK2017DPE Datasheet. Equivalente

 0.1. Size:121K  renesas
 rej03g1589 rjk2017dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:99K  renesas
 r07ds0416ej rjk2017dpp.pdf

Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 (Previous REJ03G1797-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 07, 2011 Features Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AB-A (Package name TO-220FN) D 1.

 9.1. Size:115K  renesas
 rej03g1761 rjk2057dpads.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:102K  renesas
 rej03g1868 rjk2054dpcds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:238K  renesas
 rej03g0512 rjk2006dpj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:87K  renesas
 rjk2075dpa.pdf

Preliminary Datasheet RJK2075DPA R07DS0856EJ0200 200V - 20A - MOS FET Rev.2.00 High Speed Power Switching Jan 10, 2013 Features Low on-resistance RDS(on) = 0.054 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PWSN0008DE-A (Package name WPAK(3F)) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

 9.5. Size:86K  renesas
 rej03g0474 rjk2009dpm.pdf

Preliminary Datasheet RJK2009DPM REJ03G0474-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol

 9.6. Size:117K  renesas
 rej03g1735 rjk2055dpads.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:87K  renesas
 rjk2076dpa.pdf

Preliminary Datasheet RJK2076DPA R07DS0859EJ0200 200V - 20A - MOS FET Rev.2.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.068 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25 C) Low leakage current High speed switching Outline REN

 9.8. Size:85K  renesas
 rjk2062jpk.pdf

Preliminary Datasheet RJK2062JPK R07DS0488EJ0100 200 V - 80 A - N Channel Power MOS FET Rev.1.00 High Speed Power Switching Sep 19, 2012 Features For Automotive applications AEC-Q101 compliant Low on-resistance RDS(on) = 17 m typ. Low input capacitance Ciss = 6800 pF typ Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) 2, 4 4 D

 9.9. Size:117K  renesas
 rjk2061jpe.pdf

Preliminary Datasheet RJK2061JPE R07DS0369EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 12, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 55 m typ. Low input capacitance Ciss = 1850 pF typ Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) 2, 4 D 4 1. Gate

 9.10. Size:262K  inchange semiconductor
 rjk2006dpe.pdf

Isc N-Channel MOSFET Transistor RJK2006DPE FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol