RJK2555DPA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK2555DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm

Encapsulados: WPAK

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RJK2555DPA datasheet

 0.1. Size:115K  renesas
 rej03g1776 rjk2555dpads.pdf pdf_icon

RJK2555DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:115K  renesas
 rej03g1777 rjk2557dpads.pdf pdf_icon

RJK2555DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:85K  renesas
 rej03g1486 rjk2511dpkds.pdf pdf_icon

RJK2555DPA

Preliminary Datasheet RJK2511DPK REJ03G1486-0500 Silicon N Channel MOS FET Rev.5.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 S 3 Absolute Maximum Ratings (Ta = 25 C) Item S

 9.2. Size:87K  renesas
 rej03g0508 rjk2508dpk.pdf pdf_icon

RJK2555DPA

Preliminary Datasheet RJK2508DPK REJ03G0508-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline PRSS0004ZE-A (Previous code TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit

MOSTRAR MÁS

Otros transistores... RJK2009DPM, RJK2017DPE, RJK2017DPP, RJK2054DPC, RJK2055DPA, RJK2057DPA, RJK2508DPK, RJK2511DPK, 5N65, RJK2557DPA, RJK3008DPK, RJK4002DPP-M0, RJK4006DPD, RJK4006DPP-M0, RJK4007DPP-M0, RJK4012DPE, RJK4013DPE