RJK5006DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK5003DPD R07DS0049EJ0400(Previous: REJ03G0580-0300)Silicon N Channel Power MOS FET Rev.4.00High Speed Power Switching Use Jul 22, 2010Features VDSS : 500 V RDS(on) : 1.5 (MAX.) ID : 5 A Surface mount package (MP-3A) Outline RENESAS Package code: PRSS0004ZG-A2, 4(Package name : MP-3A)41. Gate2. Drain13. Source

Preliminary Datasheet RJK5002DPD R07DS0866EJ0100500V - 2.4A - MOS FET Rev.1.00High Speed Power Switching Aug 08, 2012Features Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3S

Preliminary DatasheetRJK5002DJE R07DS0844EJ0100500V - 2.4A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2012Features Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Ma