RJK5012DPE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK5012DPE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Qgⓘ - Carga de la puerta: 29 nC

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: LDPAK

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RJK5012DPE datasheet

 0.1. Size:83K  renesas
rej03g1487 rjk5012dpeds.pdf pdf_icon

RJK5012DPE

Preliminary Datasheet RJK5012DPE REJ03G1487-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 12, 2010 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. S

 5.1. Size:108K  renesas
r07ds0421ej rjk5012dpp.pdf pdf_icon

RJK5012DPE

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source

 8.1. Size:83K  renesas
r07ds0487ej rjk5013dpe.pdf pdf_icon

RJK5012DPE

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) )

 8.2. Size:92K  renesas
rej03g1753 rjk5015dpmds.pdf pdf_icon

RJK5012DPE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... RJK4018DPK, RJK4512DPE, RJK4513DPE, RJK4514DPK, RJK4515DPK, RJK4518DPK, RJK5003DPD, RJK5006DPD, RFP50N06, RJK5012DPP-M0, RJK5013DPE, RJK5013DPK, RJK5014DPK, RJK5015DPK, RJK5015DPM, RJK5018DPK, RJK5020DPK