RJK6011DJE Datasheet. Equivalente

 0.1. Size:114K  renesas
 rej03g1577 rjk6011djeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:51K  renesas
 r07ds0131ej rjk6018dpm.pdf

Preliminary Datasheet RJK6018DPM R07DS0131EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Sep 09, 2010 Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate 2. Drain G 3. Source S

 8.2. Size:122K  renesas
 rej03g1517 rjk6014dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:79K  renesas
 r07ds0495ej rjk6018dpk.pdf

Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 (Previous REJ03G1537-0100) 600 V - 30 A - MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2.

 8.4. Size:78K  renesas
 rjk6013dpp-e0.pdf

Preliminary Datasheet RJK6013DPP-E0 R07DS0612EJ0100 600V - 11A - MOS FET Rev.1.00 High Speed Power Switching Feb 20, 2012 Features Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source

 8.5. Size:82K  renesas
 r07ds0445ej rjk6012dpe.pdf

Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 (Previous REJ03G1481-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 17, 2011 Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D

 8.6. Size:120K  renesas
 rej03g1536 rjk6015dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:91K  renesas
 rej03g1752 rjk6015dpmds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:89K  renesas
 rej03g1535 rjk6013dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:233K  inchange semiconductor
 rjk6015dpk.pdf

isc N-Channel MOSFET Transistor RJK6015DPK FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low on-resistance Low leakage current High speed switching

 8.10. Size:258K  inchange semiconductor
 rjk6014dpk.pdf

isc N-Channel MOSFET Transistor RJK6014DPK FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-