RJL5018DPK Todos los transistores

 

RJL5018DPK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJL5018DPK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 72 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: TO3P

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RJL5018DPK datasheet

 0.1. Size:181K  renesas
rej03g1817 rjl5018dpkds.pdf pdf_icon

RJL5018DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:204K  renesas
rjl5012dpp.pdf pdf_icon

RJL5018DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:181K  renesas
rjl5013dpp.pdf pdf_icon

RJL5018DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:93K  renesas
rjl5012dpp-m0.pdf pdf_icon

RJL5018DPK

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL)

Otros transistores... RJK6054DPP-M0 , RJK6066DPP-M0 , RJK60S5DPK-M0 , RJL5012DPE , RJL5012DPP-M0 , RJL5013DPE , RJL5014DPK , RJL5015DPK , IRF1404 , RJL5020DPK , RJL5032DPP-M0 , RJL6012DPE , RJL6013DPE , RJL6015DPK , RJL6018DPK , RJL6020DPK , RJL6032DPP-M0 .

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