RQJ0302NGDQA Todos los transistores

 

RQJ0302NGDQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQJ0302NGDQA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.8 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 2.2 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.138 Ohm

Empaquetado / Estuche: MPAK

Búsqueda de reemplazo de MOSFET RQJ0302NGDQA

 

RQJ0302NGDQA Datasheet (PDF)

1.1. r07ds0294ej rqj0302ngd.pdf Size:82K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500 (Previous: REJ03G1271-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 138 m? typ (VGS = 10 V, ID = 1.1 A) ? Low drive current ? High speed switching ? 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2

4.1. rej03g1265 rqj0301hgdqsds.pdf Size:103K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1778 rqj0304dqdqsds.pdf Size:128K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. r07ds0298ej rqj0306fqd.pdf Size:110K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200 (Previous: REJ03G1719-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G

4.4. rej03g1779 rqj0305eqdqsds.pdf Size:126K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. r07ds0296ej rqj0304dqd.pdf Size:109K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200 (Previous: REJ03G1717-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G

4.6. r07ds0297ej rqj0305eqd.pdf Size:125K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 (Previous: REJ03G1718-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G

4.7. rej03g1780 rqj0306fqdqsds.pdf Size:129K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.8. r07ds0295ej rqj0303pgd.pdf Size:98K _renesas

RQJ0302NGDQA
RQJ0302NGDQA

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500 (Previous: REJ03G1272-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 54 m? typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


RQJ0302NGDQA
  RQJ0302NGDQA
  RQJ0302NGDQA
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |

 

 

 
Back to Top