RQJ0302NGDQA Todos los transistores

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500 (Previous REJ03G1271-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 (Previous REJ03G1718-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200 (Previous REJ03G1717-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200 (Previous REJ03G1719-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500 (Previous REJ03G1272-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G