RQJ0303PGDQA Todos los transistores

 

RQJ0303PGDQA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RQJ0303PGDQA
   Código: PG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.8 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3.3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 1 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 29 nS
   Conductancia de drenaje-sustrato (Cd): 111 pF
   Resistencia entre drenaje y fuente RDS(on): 0.068 Ohm
   Paquete / Cubierta: SC59A MPAK

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RQJ0303PGDQA Datasheet (PDF)

 4.1. Size:98K  renesas
r07ds0295ej rqj0303pgd.pdf

RQJ0303PGDQA RQJ0303PGDQA

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500(Previous: REJ03G1272-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G

 8.1. Size:82K  renesas
r07ds0294ej rqj0302ngd.pdf

RQJ0303PGDQA RQJ0303PGDQA

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500(Previous: REJ03G1271-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

 8.2. Size:129K  renesas
rej03g1780 rqj0306fqdqsds.pdf

RQJ0303PGDQA RQJ0303PGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:126K  renesas
rej03g1779 rqj0305eqdqsds.pdf

RQJ0303PGDQA RQJ0303PGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:103K  renesas
rej03g1265 rqj0301hgdqsds.pdf

RQJ0303PGDQA RQJ0303PGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:125K  renesas
r07ds0297ej rqj0305eqd.pdf

RQJ0303PGDQA RQJ0303PGDQA

Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200(Previous: REJ03G1718-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.6. Size:109K  renesas
r07ds0296ej rqj0304dqd.pdf

RQJ0303PGDQA RQJ0303PGDQA

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200(Previous: REJ03G1717-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.7. Size:128K  renesas
rej03g1778 rqj0304dqdqsds.pdf

RQJ0303PGDQA RQJ0303PGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:110K  renesas
r07ds0298ej rqj0306fqd.pdf

RQJ0303PGDQA RQJ0303PGDQA

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200(Previous: REJ03G1719-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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