RQJ0602EGDQS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RQJ0602EGDQA R07DS0299EJ0500(Previous: REJ03G1273-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 490 m typ (VGS = 10 V, ID = 0.55 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

Preliminary Datasheet RQJ0603LGDQA R07DS0300EJ0500(Previous: REJ03G1274-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 158 m typ (VGS = 10 V, ID = 0.9 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.