RQK0607AQDQS Todos los transistores

 0.1. Size:134K  renesas
 rej03g1620 rqk0607aqdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:132K  renesas
 rej03g1622 rqk0609cqdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:110K  renesas
 r07ds0308ej rqk0604igd.pdf

Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 (Previous REJ03G1496-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 111 m typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Packa

 8.3. Size:104K  renesas
 rej03g0577 rqk0603cgdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:103K  renesas
 r07ds0307ej rqk0603cgd.pdf

Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500 (Previous REJ03G1277-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 212 m typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. Sou

 8.5. Size:111K  renesas
 r07ds0310ej rqk0606kgd.pdf

Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 (Previous REJ03G1497-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 173 m typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Pac

 8.6. Size:133K  renesas
 rej03g1621 rqk0608bqdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:84K  renesas
 r07ds0309ej rqk0605jgd.pdf

Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 (Previous REJ03G1278-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. S

 8.8. Size:104K  renesas
 rej03g0575 rqk0601agdqsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.