HAT1132R Todos los transistores

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HAT1132R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAT1132R

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 7 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: SOP8

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HAT1132R Datasheet (PDF)

4.1. rej03g1244 hat1139h.pdf Size:98K _renesas

HAT1132R
HAT1132R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.1. rej03g0406 hat1126rrj.pdf Size:131K _renesas

HAT1132R
HAT1132R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.2. rej03g0446 hat1111c.pdf Size:163K _renesas

HAT1132R
HAT1132R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.3. rej03g0416 hat1110r.pdf Size:232K _renesas

HAT1132R
HAT1132R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.4. hat1128r.pdf Size:81K _renesas

HAT1132R
HAT1132R

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =

5.5. rej03g1234 hat1108c.pdf Size:97K _renesas

HAT1132R
HAT1132R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. rej03g1330 hat1127hds.pdf Size:100K _renesas

HAT1132R
HAT1132R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Otros transistores... RQK0607AQDQS , RQK0608BQDQS , RQK0609CQDQS , RQK2001HQDQA , RQK2501YGDQA , RQM2201DNS , RJK0362DSP , RJK0358DSP , BF245C , HAT1131R , HAT1130R , HAT1129R , HAT1128R , HAT1139H , HAT1127H , HAT1125H , RJK0358DPA .

 


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Introduzca al menos 1 números o letras