RJK0358DPA Todos los transistores

 0.1. Size:94K  renesas
 rej03g1651 rjk0358dpads.pdf

Preliminary Datasheet RJK0358DPA REJ03G1651-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DC-A (Package name WPAK(2)) 5 6 7 8

 6.1. Size:125K  renesas
 rej03g1652 rjk0358dspds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:127K  renesas
 rej03g1721 rjk0351dspds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:88K  renesas
 rej03g1661 rjk0354dspds.pdf

Preliminary Datasheet RJK0354DSP REJ03G1661-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 05, 2010 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D

 8.3. Size:126K  renesas
 rej03g1650 rjk0355dspds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:94K  renesas
 rej03g1646 rjk0351dpads.pdf

Preliminary Datasheet RJK0351DPA REJ03G1646-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

 8.5. Size:125K  renesas
 rej03g1648 rjk0353dspds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:96K  renesas
 rej03g1660 rjk0352dspds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:94K  renesas
 rej03g1647 rjk0353dpads.pdf

Preliminary Datasheet RJK0353DPA REJ03G1647-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

 8.8. Size:94K  renesas
 rej03g1649 rjk0355dpads.pdf

Preliminary Datasheet RJK0355DPA REJ03G1649-0510 Silicon N Channel Power MOS FET Rev.5.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W