2SJ352 Todos los transistores

 

2SJ352 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ352

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1000 pF

Resistencia drenaje-fuente RDS(on): 1.4 Ohm

Empaquetado / Estuche: TO3P

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2SJ352 Datasheet (PDF)

1.1. 2sj352.pdf Size:70K _renesas

2SJ352
2SJ352

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous: ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics

1.2. rej03g0860 2sj351 2sj352.pdf Size:83K _renesas

2SJ352
2SJ352

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.1. 2sj358.pdf Size:193K _upd

2SJ352
2SJ352

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. 2sj355.pdf Size:514K _upd

2SJ352
2SJ352

お客様各位 カタログ等資料中の旧社名の扱いについて 2010年4月1日を以ってNECエレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し、両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 名での表記が残っておりますが、当社の資料として有効です

 5.3. 2sj357.pdf Size:45K _upd

2SJ352
2SJ352

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings (unit: mm) used as a switching element. The 2SJ357 can be directly 5.7 ±0.1 driven by an IC operating at 5 V. 1.5 ±0.1 2.0 ±0.2 The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable

5.4. 2sj358c.pdf Size:203K _upd

2SJ352
2SJ352

 Preliminary Data Sheet 2SJ358C R07DS1262EJ0300 Rev.3.00 P-CHANNEL MOSFET FOR SWITCHING Aug 17, 2015 Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features  Directly driven by a 4.0 V power source.  Low on-state resistance RDS(on)1 = 143 m  MAX. (VGS = -1

 5.5. 2sj350.pdf Size:82K _renesas

2SJ352
2SJ352

2SJ350 Silicon P Channel MOS FET REJ03G0859-0200 (Previous: ADE-208-138) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name:

5.6. rej03g0859 2sj350ds.pdf Size:96K _renesas

2SJ352
2SJ352

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.7. 2sj351.pdf Size:70K _renesas

2SJ352
2SJ352

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous: ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped wit

5.8. 2sj358.pdf Size:96K _nec

2SJ352
2SJ352

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings (unit: mm) The 2SJ358 is a P-channel vertical MOS FET that can 5.7 0.1 be used as a switching element. The 2SJ358 can be 1.5 0.1 2.0 0.2 directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for a

5.9. 2sj356.pdf Size:65K _nec

2SJ352
2SJ352

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 4.5 0.1 IC operating at 5 V. 1.6 0.2 This product has a low ON resistance and superb switching 1.5 0.1 characteristics and is ideal for drivi

5.10. 2sj355-t1.pdf Size:63K _nec

2SJ352
2SJ352

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 4.5 0.1 IC operating at 5 V. 1.6 0.2 This product has a low ON resistance and superb switching 1.5 0.1 characteristics and is ideal for driving the

5.11. 2sj353.pdf Size:55K _nec

2SJ352
2SJ352

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 7.0 MAX. 1.2 IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuato

5.12. 2sj356.pdf Size:1054K _kexin

2SJ352
2SJ352

SMD Type MOSFET P-Channel MOSFET 2SJ356 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-2 A (VGS =-10V) 0.42 0.1 ● RDS(ON) < 0.5Ω (VGS =-10V) 0.46 0.1 ● RDS(ON) < 0.95Ω (VGS =-4V) 1.Gate 2.Drain Drain (D) 3.Source Internal Gate (G) diode Gate protection diode Source (S) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volta

Otros transistores... 2SK1057 , 2SK1058 , 2SK2220 , 2SK2221 , 2SJ160 , 2SJ161 , 2SJ162 , 2SJ351 , APT50M38JLL , RQA0011DNS , RQA0004PXDQS , RQA0005QXDQS , RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , RQA0005AQS .

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