2SJ661 Todos los transistores

 

2SJ661 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ661
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 285 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: SMP
 

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2SJ661 Datasheet (PDF)

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2SJ661

Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --

 ..2. Size:373K  onsemi
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2SJ661

Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage

 0.1. Size:283K  onsemi
 2sj661-1e.pdf pdf_icon

2SJ661

Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage

 9.1. Size:209K  toshiba
 2sj669.pdf pdf_icon

2SJ661

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8

MOSTRAR MÁS

Otros transistores... RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , RQA0005AQS , RQA0008NXAQS , RQA0009SXAQS , RQA0010UXAQS , IRFP064N , 2SJ665 , 2SK3707 , 2SK3821 , 2SK3823 , 2SK3824 , 2SK3826 , 2SK3827 , 2SK3829 .

History: OSG70R1KAF

 

 
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