2SJ661 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ661
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 285 nS
Cossⓘ - Capacitancia de salida: 470 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
Paquete / Cubierta: SMP
Búsqueda de reemplazo de 2SJ661 MOSFET
2SJ661 PDF Specs
2sj661.pdf
Ordering number EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --... See More ⇒
2sj661.pdf
Ordering number EN8586A 2SJ661 P-Channel Power MOSFET http //onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2L Features ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage ... See More ⇒
2sj661-1e.pdf
Ordering number EN8586A 2SJ661 P-Channel Power MOSFET http //onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2L Features ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage ... See More ⇒
2sj669.pdf
2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.8 ... See More ⇒
Otros transistores... RQA0010VXDQS , RQA0008RXDQS , RQA0009TXDQS , RQA0004LXAQS , RQA0005AQS , RQA0008NXAQS , RQA0009SXAQS , RQA0010UXAQS , AO4468 , 2SJ665 , 2SK3707 , 2SK3821 , 2SK3823 , 2SK3824 , 2SK3826 , 2SK3827 , 2SK3829 .
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