2SK3823 Todos los transistores

 ..1. Size:38K  sanyo
 2sk3823.pdf

Ordering number ENN8241 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3823 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 ..2. Size:288K  inchange semiconductor
 2sk3823.pdf

isc N-Channel MOSFET Transistor 2SK3823 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 27.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:45K  1
 2sk3822.pdf

Ordering number ENN8014 2SK3822 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3822 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.2. Size:38K  1
 2sk3828.pdf

Ordering number ENN8245 2SK3828 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3828 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.3. Size:38K  1
 2sk3825.pdf

Ordering number ENN8242 2SK3825 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3825 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.4. Size:40K  sanyo
 2sk3821.pdf

Ordering number ENN8058 2SK3821 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3821 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.5. Size:38K  sanyo
 2sk3826.pdf

Ordering number ENN8243 2SK3826 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3826 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.6. Size:38K  sanyo
 2sk3827.pdf

Ordering number ENN8244 2SK3827 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3827 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.7. Size:38K  sanyo
 2sk3829.pdf

Ordering number ENN8031 2SK3829 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3829 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.8. Size:53K  sanyo
 2sk3820.pdf

Ordering number ENN8147 2SK3820 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3820 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.9. Size:38K  sanyo
 2sk3824.pdf

Ordering number ENN8230 2SK3824 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3824 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 8.10. Size:357K  inchange semiconductor
 2sk3820b.pdf

isc N-Channel MOSFET Transistor 2SK3820B FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:60K  inchange semiconductor
 2sk382.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK382 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching regulator DC-DC converter, RF amplifiers and ultrasonic

 8.12. Size:282K  inchange semiconductor
 2sk3821k.pdf

isc N-Channel MOSFET Transistor 2SK3821K FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:289K  inchange semiconductor
 2sk3826.pdf

isc N-Channel MOSFET Transistor 2SK3826 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.14. Size:356K  inchange semiconductor
 2sk3821b.pdf

isc N-Channel MOSFET Transistor 2SK3821B FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.15. Size:289K  inchange semiconductor
 2sk3827.pdf

isc N-Channel MOSFET Transistor 2SK3827 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.16. Size:289K  inchange semiconductor
 2sk3828.pdf

isc N-Channel MOSFET Transistor 2SK3828 FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.17. Size:273K  inchange semiconductor
 2sk3829.pdf

isc N-Channel MOSFET Transistor 2SK3829 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 27.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.18. Size:357K  inchange semiconductor
 2sk3822b.pdf

isc N-Channel MOSFET Transistor 2SK3822B FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.19. Size:283K  inchange semiconductor
 2sk3822k.pdf

isc N-Channel MOSFET Transistor 2SK3822K FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.20. Size:283K  inchange semiconductor
 2sk3820k.pdf

isc N-Channel MOSFET Transistor 2SK3820K FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.21. Size:289K  inchange semiconductor
 2sk3825.pdf

isc N-Channel MOSFET Transistor 2SK3825 FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.22. Size:288K  inchange semiconductor
 2sk3824.pdf

isc N-Channel MOSFET Transistor 2SK3824 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d